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MMBTA55-A56
PNP General Purpose Transistor
Features • Epitaxial planar die construction. • Complementary NPN type available(MMBTA05/MMBTA06). • Low collector-emitter saturation voltage. • RoHS compliant package Application • Ideal for medium NPN amplification and switching. Packing & Order Information 3,000/Reel
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Publication Order Number: [MMBTA55-A56]
© Bruckewell Technology Corporation Rev. A -2014
MMBTA55-A56
PNP General Purpose Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Symbol
Parameter
MMBTA55
MMBTA56
VCBO
Collector-Base Voltage
-60 -80
VCEO
Collector-Emitter Voltage
-80 -80
VEBO
Emitter-Base Voltage
-4
IC collector current (DC)
-0.5
PC Collector Dissipation
-0.