Galaxy Century Microelectronics MMSTA92
PNP Silicon Epitaxial Planar Transistor
FEATURES
● Power dissipation.(PC=200mW)● Epitaxial planar die construction.
● Complementary to MMSTA42.
● Also available in lead free version. Pb Lead-free MMSTA92
APPLICATIONS
● General purpose application and switching application. ORDERING INFORMATION Type No. Marking MMSTA92 K3R SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -300 VCEO Collector-Emitter Voltage -300 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F058 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor MMSTA92ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(B