PXT8050 Datasheet | Galaxy Microelectronics

FEATURES - mplimentray to PXT8550 Pb Lead-free Production specification PXT8050(NPN) APPLICATIONS - This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC IB PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current-Continuous Collecter Power dissipation 40 V 25 V 6V 1.5 A 500 m A 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ E030 Rev.A .gmesemi. Production specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN) ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage...