Galaxy Century Microelectronics PXT8050
PLASTIC-ENCAPSULATE TRANSISTORS
| Part No. | PXT8050 |
|---|---|
| Datasheet | PXT8050 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PLASTIC-ENCAPSULATE TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Commplimentray to PXT8550 Pb Lead-free Production specification PXT8050(NPN)APPLICATIONS
● This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking PXT8050 8050 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC IB PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current-Continuous Collecter Power dissipation 40 V 25 V 6V 1.5 A 500 mA 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ E030 Rev.A 1 Production specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN)ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CE
