GRANDE PXT8050
NPN GENERAL PURPOSE TRANSISTOR
FEATURES
● NPN epitaxial silicon, planar design● Epitaxial planar die construction
● Complimentary to PXT8550
● Lead free in compliance with EU RoHS SOT-89 4.40~4.60 1.60~1.80 Unit:mm 1.40~1.60 2.30~2.60 3.94~4.25
MECHANICAL DATA
● Case Material: Molded Plastic.● UL Flammability Classification Rating 94V-0 3 COLLECTOR 1 BASE 1.5(Typ) 0.90~1.20 0.32~0.52 2 EMITTER
MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Collector - Emitter Voltage Parameter Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Collector Dissipation Thermal resistance junction to ambient Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PC R θJA TJ TSTG Value 25 40 5 1.5 500 250 150 -55~+150 Units V V V A mW oC/W oC oC 2018-1-1-REV.01 PAGE . 1 PXT8050ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise specified) Parameter Collector-base