Galaxy Century Microelectronics PXT8550
PLASTIC-ENCAPSULATE TRANSISTORS
FEATURES
● Commplimentray to PXT8050 Pb Lead-free Production specification PXT8550 ORDERING INFORMATION Type No. Marking PXT8550 8550 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collecter Power dissipation -40 V -25 V -5 V -1.5 A 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ E030 Rev.A 1 Production specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8550ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA ,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO