PXT8550
PXT8550 is PNP Transistor manufactured by Jin Yu.
FEATURES pliment to PXT8050
SOT-89
1. BASE
MARKING: Y2
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -40 -25 -5 -1.5 0.5 150
-55-150
Units V V V A W
℃ ℃
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter positive favor voltage Transition frequency output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) VBE(on) VBEF f T Cob
Test conditions IC= -100μA, IE=0 IC= -0.1m A, IB=0 IE= -100μA, IC=0 VCB= -40 V,IE=0 VCE= -20V, IB=0 VEB= -5V, IC=0 VCE= -1V, IC= -100m A VCE= -1V, IC= -800m A IC=-800m A, IB= -80m A IC=-800m A, IB= -80m A Ic=-1V,VCE=-10m A IB=-1A VCE= -10V, IC= -50m A VCB=-10V,IE=0,f=1MHz
MIN MAX UNIT
-40 V
-25 V
-5 V
-0.1 μA
-0.1 μA
-0.1 μA
85 400
-0.5 V
-1.2 V
-1 V
-1.55
100 MHz
20 p F
CLASSIFICATION OF h FE(1)...
