Galaxy Century Microelectronics PZTA42
NPN Silicon Epitaxial Planar Transistor
FEATURES
● Epitaxial planar die construction● Low current
● High voltage NPN Silicon Epitaxial Planar Transistor PZTA42 Mechanic al Data
● Case: SOT-223
● Molding compound: UL flammability classification rating 94V-0
● Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-223 Ordering Information Part Number PZTA42 Package SOT-223 Shipping Quantity 4000 pcs / Tape & Reel Marking Code A42
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Symbol VCBO VCEO VEBO IC Value 300 300 6 0.5 Unit V V V A Thermal Characteristics Parameter Symbol Value Unit Power Dissipation *1 Thermal Resistance (Junction-to-Ambient) *1 PD RθJA 1.5 W 83.3 °C/W Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note1: Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.