Galaxy Century Microelectronics RB160M-30
Schottky Barrier Diode
| Part No. | RB160M-30 |
|---|---|
| Datasheet | RB160M-30 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Small power mold type● Low IR
● High reliability Product Specification RB160M-30
APPLICATIONS
● General rectification SOD-123 ORDERING INFORMATION Type No. Marking RB160M-30 73 Package Code SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 30 V Reverse Voltage VR 30 V Average rectified forward current IO 1 A Forward current surge peak (60Hz / 1cyc) IFSM 30 A Power Dissipation Pd 400 mW Storage temperature TSTG -40 to+125 ℃ Junction temperature TJ 125 ℃ SSM0147A 1 Product Specification Schottky Barrier Diode RB160M-30ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Forward Voltage IF=0.5A VF IF=1.0A - 0.39 0.46 V - 0.43 0.48 V Reverse Current VR=15V IR VR=30V - 3.0 20 μA - 9.0 50 μA TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SSM0147A 2 Schottky Barrier Diode Product Specification RB160M-30 SSM0147A 3 Schottky Barrier Diod...
