Kexin Electronics RB160M-30
Schottky Barrier Diode
FEATURES
Small power mold type. Low IR High reliability Schottky Barrier Diode RB160M-30 Diodes SOD-123 2.7+0.1 -0.1 Unit: mm 1.1+0.05 -0.05 +0.10.55 -0.1 +0.11.6 -0.1 3.7+0.1 -0.1 0.50 0.128 0.03 0.35 3.8 0.1 0.1max +0.050.1 -0.02 1.10 0.05ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Reverse voltage reverse voltage Forward current surge peak Average rectified forward current operating junction temperature storage temperature Symbol VRM VR Io IFSM Tj Tstg Rating 30 30 1 30 125 -40 to +150 Unit V V A AELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Forward voltage Reverse current Symbol VF1 IF=0.5A VF2 IF=1.0A IR1 VR=15V IR2 VR=30V Testconditons Min Typ Max Unit 0.39 0.46 V 0.43 0.48 V 3.0 20 A 9.0 50 A 1 SMD Type Diodes RB160M-30 zElectrical characteristic curves (Ta=25°C) FORWARD CURRENT:IF(A) 1 Ta=75℃ Ta=125℃ 0.1 0.01 Ta=25℃ Ta=-25℃ 0.001 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(uA) 10000 1000 100 10 1 0.1 0.01 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=...