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S8550 - Silicon NPN Transistor

Key Features

  • High Collector Current. (IC= -500mA).
  • Complementary To S8050.
  • Excellent HFE Linearity. Pb Lead-free.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
S8550W Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= -500mA).  Complementary To S8050.  Excellent HFE Linearity. Pb Lead-free APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking S8550 2TY Production specification S8550 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -500 PC Collector Dissipation 300 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C080 Rev.A www.gmesemi.