Galaxy Century Microelectronics SD106WS
Silicon Epitaxial Planar Diode
FEATURES
● Low turn-on voltage● Fast switching Pb Lead-free
● This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge
● Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application
● Microminiature plastic package SD106WS SOD-323
APPLICATIONS
● High speed switching ORDERING INFORMATION Type No. Marking SD106WS S21 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Non-Repetitive Peak reverse voltage VRM 30 Peak forward Current IFM 200 Forward surge current @tp=10ms IFSM 1 Power dissipation Ptot 250 Thermal resistance junction to ambient air RθjA 500 Junction temperature Tj 150 Storage temperature TSTG -65 to +150 Unit V mA A mW ℃/W ℃ ℃ B026 Rev.A 1 Production specification Silicon Epitaxi