SD106WS Datasheet | General Semiconductor

FEATURES ¨ ¨ ¨ ¨ Low turn-on voltage Fast switching Microminiature plastic package These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge. ¨ Ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Cathode Mark Top View max. .049 (1.25) max. .004 (0.1) max. .006 (0.15) .059 (1.5) .043 (1.1) MECHANICAL DATA Case: SOD-323 Plastic Package Weight: approx. 0.004g Marking Code: S2 min. .010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Continuous Reverse Voltage Forward Current Forward Surge Current, tp = 10ms Power Dissipation TC= 25¡C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that electrodes are kept at ambient temperature VR IF IFSM Ptot RQJA Tj TS 30 200 1.0 250 (NOTE 1) 500 150 -65 to + 150 Volts m A A m W ¡C/W ¡C ¡C ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. TYP. MAX. UNIT Reverse Breakdown Voltage at IR = 100 m A Leakage Current at VR = 30 V Forward Voltage at IF = 2.0 m A at IF = 15 m A at IF = 100 m A at IF = 200m A Junction Capacitance at VR = 10V, f = 1.0MHZ BVR IR 30 Ð Ð Ð Ð 5.0 Volts m A m V m V m V m V p F VF VF VF VF Ctot Ð Ð Ð Ð Ð 260 320 420 490 Ð Ð Ð Ð 550 Max...