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18N10 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Overview: GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number 18N10
Manufacturer GOFORD
File Size 612.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet 18N10-GOFORD.pdf

General Description

The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 100V 25A < 53mΩ < 63mΩ Schematic diagram.

18N10 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Inchange Semiconductor Logo 18N10 N-Channel Mosfet Transistor Inchange Semiconductor

More Datasheets from GOFORD

Part Number Description

18N10 Distributor