18N10 - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 100V 25A < 53mΩ < 63mΩ Schematic diagram.

📥 Download Datasheet

18N10 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	18N10
Manufacturer	GOFORD
File Size	612.98 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	18N10 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
18N10	N-Channel Mosfet Transistor	Inchange Semiconductor
18N120BN	HGTG18N120BN	Fairchild Semiconductor
18N20	N-CHANNEL POWER MOSFET	UTC
18N20	N-Channel Mosfet Transistor	Inchange Semiconductor
18N20GH	AP18N20GH	Advanced Power Electronics

Other Datasheets by GOFORD

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.