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18N10 - N-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 100V 25A < 53mΩ < 63mΩ Schematic diagram.

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Datasheet preview – 18N10

Datasheet Details

Part number 18N10
Manufacturer GOFORD
File Size 612.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 18N10 Datasheet
Additional preview pages of the 18N10 datasheet.

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    Full PDF Text Transcription

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    GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.
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