18N10 - N-Channel Mosfet Transistor

Inchange Semiconductor

Key Features

Drain Current ID= 18A@ TC=25℃.
Drain Source Voltage : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max).
Fast Switching.

18N10 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	18N10
Manufacturer	Inchange Semiconductor
File Size	61.98 KB
Description	N-Channel Mosfet Transistor
Datasheet	18N10 Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 18N10 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 18 A IDM Drain Current-Single Plused 45 A PD Total Dissipation @TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.