Datasheet Details
| Part number | 6616A |
|---|---|
| Manufacturer | GOFORD |
| File Size | 2.43 MB |
| Description | MOSFET |
| Datasheet | 6616A-GOFORD.pdf |
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Overview: GOFORD General.
| Part number | 6616A |
|---|---|
| Manufacturer | GOFORD |
| File Size | 2.43 MB |
| Description | MOSFET |
| Datasheet | 6616A-GOFORD.pdf |
|
|
|
The 6616A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch.
Product Summary VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -12V 17 mΩ 21mΩ -16 A ● High power and current handing capability ● RoHS pliant ● Surface mount package ●PWM applications G1 ●Load switch Ordering Information Part Number 6616A Marking 6616A Case SOP-8 6616A SOIC-8 Pin1 Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 D1 D2 1 G2 S1 S2 Packaging 2500pcs/Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -16 -12 -105 3 1.6 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 48 74 Maximum Junction-to-Lead Steady-State RθJL 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W .gofordsemi.
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