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HS9-6617RH-T Datasheet

Radiation Hardened 2k X 8 CMOS Prom

Manufacturer: Intersil (now Renesas)

HS9-6617RH-T Overview

HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil...

HS9-6617RH-T Key Features

  • QML Class T, Per MIL-PRF-38535
  • Radiation Performance
  • Gamma Dose (γ) 1 x 105 RAD(Si)
  • SEU LET 16MeV/mg/cm2
  • SEL LET 100MeV/mg/cm2
  • Field Programmable Nicrome Fuse Links
  • Low Standby Power 1.1mW Max
  • Low Operating Power 137.5mW/MHz Max
  • Fast Access Time 100ns Max
  • TTL patible Inputs/Outputs

More Datasheets from Intersil (now Renesas)

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Part Number Description
HS9-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
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HS9-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9-65647RH-8 Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM

HS9-6617RH-T Distributor