HS9-6617RH-Q - Radiation Hardened 2K x 8 CMOS PROM

Product Overview

Intersil Corporation

Part number	HS9-6617RH-Q
Manufacturer	Intersil Corporation
File Size	128.42 KB
Description	Radiation Hardened 2K x 8 CMOS PROM
Datasheet	HS9-6617RH-Q Datasheet
Additional preview pages of the HS9-6617RH-Q datasheet.

The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format.

The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617.

Total Dose 1 x 10 RAD (Si) Latch-Up Free >1 x 1012 RAD (Si)/s Field Programmable Functionally Equivalent to HM-6617 Pin Compatible with Intel 2716 Low Standby Power 1.1mW Max Low Operating Power 137.5mW/MHz Max Fast Access Time 100ns Max TTL Compatible Inputs/Outputs Synchronous Operation On Chip Address Latches Three-State Outputs Nicrome Fuse Lin.

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Published: Mar 26, 2005 |