G03N10 - N-CHANNEL MOSFET

Key Features

High Density Cell Design for Ultra Low RDS(on).
Special Process Technology for High ESD Capability.
Excellent Package for Good Heat Dissipation.
Epoxy Meets UL 94 V-0 Flammability Rating.
Moisture Sensitivity Level 1.
Halogen Free. “Green” Device (Note 1).
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-.

G03N10 n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G03N10
Manufacturer	GOFORD
File Size	1.09 MB
Description	N-CHANNEL MOSFET
Datasheet	G03N10 Datasheet

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GOFORD G03N10 Features • High Density Cell Design for Ultra Low RDS(on) • Special Process Technology for High ESD Capability • Excellent Package for Good Heat Dissipation • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 250°C/W Junction to Ambient(Note 2) Parameter Drain-Source Voltage Gate-Source Volltage Continuous Drain Current Pulsed Drain Current(Note 3) Total Power Dissipation Symbol VDS VGS ID IDM PD Rating 100 ±20 3 20 500 Unit V V A A mW Note: 1.