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G040P04 Datasheet PDF

GOFORD G040P04

The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G040P04
Datasheet G040P04 Download
Manufacturer GOFORD
Description P-Channel Enhancement Mode Power MOSFET
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G040P04 datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -222A < 3.5mΩ < 4.5mΩ Schematic diagram Application l Power switch l DC/DC converters TO-263 Ordering Information Device G040P04M Package TO-263 Marking G040P04 Packaging 800pcs/Reel

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range (note1) (note2) VDS ID IDM VGS PD EAS TJ, Tstg -40 V -222 A -888 A ±20 V 312 W 625 mJ -55 To 150 ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case Symbol RthJA RthJC Value 50 0.4 Unit ºC/W ºC/W TEL:0755-29961263 FAX:0755-29961466(A1778-V1.0) G040P04M Specifications TJ = 25ºC, unless otherwise...
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