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G040P04M - P-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -222A < 3.5mΩ < 4.5mΩ Schematic diagram.

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Datasheet preview – G040P04M

Datasheet Details

Part number G040P04M
Manufacturer GOFORD
File Size 924.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G040P04M Datasheet
Additional preview pages of the G040P04M datasheet.

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Full PDF Text Transcription

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G040P04M P-Channel Enhancement Mode Power MOSFET Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -222A < 3.5mΩ < 4.
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