G050N06LL - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 5A < 45mΩ < 50mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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G050N06LL N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G050N06LL

Datasheet Details

Part number	G050N06LL
Manufacturer	GOFORD
File Size	759.76 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G050N06LL Datasheet
Additional preview pages of the G050N06LL datasheet.

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Full PDF Text Transcription

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.

Published: Nov 13, 2024 |