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G09N06 Datasheet

Manufacturer: GOFORD

This datasheet includes multiple variants, all published together in a single manufacturer document.

G09N06 datasheet preview

Datasheet Details

Part number G09N06
Datasheet G09N06 G09N06S2 Datasheet (PDF)
File Size 555.03 KB
Manufacturer GOFORD
Description N-Channel Trench MOSFET
G09N06 page 2 G09N06 page 3

G09N06 Overview

The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

G09N06 Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V) < 20mΩ
  • 100% Avalanche Tested
  • RoHS pliant
  • Power switch
  • DC/DC converters

More Datasheets from GOFORD

See all GOFORD datasheets

Part Number Description
G09N06S2 N-Channel Trench MOSFET

G09N06 Distributor

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