G09N06 - N-Channel Trench MOSFET

Download the G09N06 datasheet PDF. This datasheet also covers the G09N06S2 variant, as both devices belong to the same n-channel trench mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ.
RDS(ON) (at VGS = 4.5V) < 20mΩ.
100% Avalanche Tested.
RoHS Compliant.

📥 Download Datasheet

G09N06 n-channel trench mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G09N06S2-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G09N06
Manufacturer	GOFORD
File Size	555.03 KB
Description	N-Channel Trench MOSFET
Datasheet	G09N06 Datasheet

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Other Datasheets by GOFORD

Part Number	Description
G09N06S2	N-Channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GOFORD N-Channel Trench MOSFET Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ ⚫ RDS(ON) (at VGS = 4.