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G09N06 - N-Channel Trench MOSFET

This page provides the datasheet information for the G09N06, a member of the G09N06S2 N-Channel Trench MOSFET family.

Datasheet Summary

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ.
  • RDS(ON) (at VGS = 4.5V) < 20mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet preview – G09N06

Datasheet Details

Part number G09N06
Manufacturer GOFORD
File Size 555.03 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet G09N06 Datasheet
Additional preview pages of the G09N06 datasheet.

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Full PDF Text Transcription

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GOFORD N-Channel Trench MOSFET Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ ⚫ RDS(ON) (at VGS = 4.
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