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G09N06S2 - N-Channel Trench MOSFET

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G09N06S2 N-Channel Trench MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G09N06S2

Datasheet Details

Part number	G09N06S2
Manufacturer	GOFORD
File Size	555.03 KB
Description	N-Channel Trench MOSFET
Datasheet	G09N06S2 Datasheet
Additional preview pages of the G09N06S2 datasheet.

Product details

Description

The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ.
RDS(ON) (at VGS = 4.5V) < 20mΩ.
100% Avalanche Tested.
RoHS Compliant.

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Other Datasheets by GOFORD

G09N06 - N-Channel Trench MOSFET

Published: Nov 6, 2024 |