G09N06S2 - N-Channel Trench MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ.
RDS(ON) (at VGS = 4.5V) < 20mΩ.
100% Avalanche Tested.
RoHS Compliant.

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G09N06S2 n-channel trench mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G09N06S2
Manufacturer	GOFORD
File Size	555.03 KB
Description	N-Channel Trench MOSFET
Datasheet	G09N06S2 Datasheet

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G09N06	N-Channel Trench MOSFET

Full PDF Text Transcription (Reference)

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GOFORD N-Channel Trench MOSFET Description The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ ⚫ RDS(ON) (at VGS = 4.