G100N03
G100N03 is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
Description
The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
30V 100A < 3.5mΩ < 4.5mΩ l 100% Avalanche Tested l Ro HS pliant
Application l Power switch l DC/DC converters
Schematic Diagram Marking and pin assignment
Device G100N03D5
Package DFN5- 6-8L
Marking G100N03
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range
(note1) (note2)
VDS ID IDM VGS EAS PD TJ, Tstg
DFN5X6-8L Packaging 5000pcs/Reel
Value
Unit
±20
250 m J
-55 To 150
ºC
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case Maximum Junction-to-Case
.gofordsemi.
Symbol Rth JA Rth JC
TEL：0755-29961263
Value
Unit
ºC/W
ºC/W
TFX:0755-29961466
G100N03D5
Specifications TJ = 25ºC, unless otherwise noted
Parameter...
