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G100N03 - N-Channel Enhancement Mode Power MOSFET

Download the G100N03 datasheet PDF. This datasheet also covers the G100N03D5 variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 100A < 3.5mΩ < 4.5mΩ l 100% Avalanche Tested l RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G100N03D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G100N03
Manufacturer GOFORD
File Size 615.55 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G100N03 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G100N03D5 N-Channel Enhancement Mode Power MOSFET
G1002 N-Channel Enhancement Mode Power MOSFET
G1003B N-Channel MOSFET
G1005 MOSFET
G1006A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G100N03D5 N-Channel Enhancement Mode Power MOSFET Description The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 100A < 3.5mΩ < 4.