Datasheet4U.com

G100N03D5 - N-Channel Enhancement Mode Power MOSFET

Product Overview

📥 Download Datasheet

G100N03D5 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G100N03D5

Datasheet Details

Part number	G100N03D5
Manufacturer	GOFORD
File Size	615.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G100N03D5 Datasheet
Additional preview pages of the G100N03D5 datasheet.

Product details

Description

The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 100A < 3.5mΩ < 4.5mΩ l 100% Avalanche Tested l RoHS Compliant.

📁 Similar Datasheet

G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G1003A - N-Channel Enhancement Mode Power MOSFET (GFD)

Other Datasheets by GOFORD

G100N03 - N-Channel Enhancement Mode Power MOSFET
G1002 - N-Channel Enhancement Mode Power MOSFET
G1003B - N-Channel MOSFET
G1005 - MOSFET
G1006A - N-Channel MOSFET
G10N03 - N-Channel Enhancement Mode Power MOSFET

Published: Nov 14, 2024 |