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G100N03D5 Datasheet PDF

GOFORD G100N03D5

The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G100N03D5
Datasheet G100N03D5 Download
Manufacturer GOFORD
Description N-Channel Enhancement Mode Power MOSFET
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G100N03D5 datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 100A < 3.5mΩ < 4.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Schematic Diagram Marking and pin assignment Device G100N03D5 Package DFN5*6-8L Marking G100N03

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range (note1) (note2) VDS ID IDM VGS EAS PD TJ, Tstg DFN5X6-8L Packaging 5000pcs/Reel Value Unit 30 V 100 A 285 A ±20 V 250 mJ 50 W -55 To 150 ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Maximum Junction-to-Case Symbol RthJA RthJC TEL:0755-29961263 Value Unit 50 ºC/W 2.5 ºC/W TFX:0755-29961466 G100N03D5 Specifications TJ = 25ºC, unless otherwise noted Par...
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