Datasheet4U Logo Datasheet4U.com

G10N03 - N-Channel Enhancement Mode Power MOSFET

Download the G10N03 datasheet PDF. This datasheet also covers the G10N03S variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G10N03S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G10N03
Manufacturer GOFORD
File Size 683.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G10N03 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
G10N60A Fast IGBT Infineon
G1000LL250 Anode-Shorted Gate Turn-Off Thyristor IXYS
G1000LM250 Anode-Shorted Gate Turn-Off Thyristor IXYS
G1000NC450 Anode Shorted Gate Turn-Off Thyristor IXYS
G1000NL450 Anode Shorted Gate Turn-Off Thyristor IXYS

Other Datasheets by GOFORD

Part Number Description
G10N03S N-Channel Enhancement Mode Power MOSFET
G1002 N-Channel Enhancement Mode Power MOSFET
G1003B N-Channel MOSFET
G1005 MOSFET
G1006A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G10N03S N-Channel Enhancement Mode Power MOSFET Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.