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G10N03S - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet Details

Part number G10N03S
Manufacturer GOFORD
File Size 683.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G10N03S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G10N03S N-Channel Enhancement Mode Power MOSFET Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.