• Part: G10N03S
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: GOFORD
  • Size: 683.33 KB
G10N03S Datasheet (PDF) Download
GOFORD
G10N03S

Description

The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS pliant