G10N03S Description
The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
- Part: G10N03S
- Manufacturer: GOFORD
- Size: 683.33 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G10N03 | N-Channel Enhancement Mode Power MOSFET |
| G1002 | N-Channel Enhancement Mode Power MOSFET |
| G1003B | N-Channel MOSFET |
| G1005 | MOSFET |
| G1006A | N-Channel MOSFET |