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G18N50 - N-Channel Enhancement Mode Power MOSFET

Download the G18N50 datasheet PDF. This datasheet also covers the G18N50T variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength.

This device family is suitable for high efficiency switch mode power supplies.

Key Features

  • l VDS 500V l ID (at VGS = 10V) 18A l RDS(ON) (at VGS = 10V) < 0.35Ω l 100% Avalanche Tested l RoHS Compliant l Low Crss (typical 4.3pF) l Fast switching capability l Improved dv/dt capability Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G18N50T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G18N50
Manufacturer GOFORD
File Size 0.98 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G18N50 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G18N50T N-Channel Enhancement Mode Power MOSFET
G18NP06Y N and P Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G18N50T N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. General Features l VDS 500V l ID (at VGS = 10V) 18A l RDS(ON) (at VGS = 10V) < 0.35Ω l 100% Avalanche Tested l RoHS Compliant l Low Crss (typical 4.