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G18N50 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G18N50, a member of the G18N50T N-Channel Enhancement Mode Power MOSFET family.

Description

This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength.

This device family is suitable for high efficiency switch mode power supplies.

Features

  • l VDS 500V l ID (at VGS = 10V) 18A l RDS(ON) (at VGS = 10V) < 0.35Ω l 100% Avalanche Tested l RoHS Compliant l Low Crss (typical 4.3pF) l Fast switching capability l Improved dv/dt capability Schematic diagram.

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Datasheet preview – G18N50

Datasheet Details

Part number G18N50
Manufacturer GOFORD
File Size 0.98 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G18N50 Datasheet
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Full PDF Text Transcription

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G18N50T N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. General Features l VDS 500V l ID (at VGS = 10V) 18A l RDS(ON) (at VGS = 10V) < 0.35Ω l 100% Avalanche Tested l RoHS Compliant l Low Crss (typical 4.
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