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G18N50T - N-Channel Enhancement Mode Power MOSFET

General Description

This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength.

This device family is suitable for high efficiency switch mode power supplies.

Key Features

  • l VDS 500V l ID (at VGS = 10V) 18A l RDS(ON) (at VGS = 10V) < 0.35Ω l 100% Avalanche Tested l RoHS Compliant l Low Crss (typical 4.3pF) l Fast switching capability l Improved dv/dt capability Schematic diagram.

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Datasheet Details

Part number G18N50T
Manufacturer GOFORD
File Size 0.98 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G18N50T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G18N50T N-Channel Enhancement Mode Power MOSFET Description This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. General Features l VDS 500V l ID (at VGS = 10V) 18A l RDS(ON) (at VGS = 10V) < 0.35Ω l 100% Avalanche Tested l RoHS Compliant l Low Crss (typical 4.