GOFORD G1NP02
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | G1NP02 |
|---|---|
| Datasheet | G1NP02 Download |
| Manufacturer | GOFORD |
| Description | N and P Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
G1NP02ELLGENERAL FEATURES
● NMOS● VDS
● ID (at VGS = 10V)
● RDS(ON) (at VGS = 4.5V)
● RDS(ON) (at VGS = 2.5V)
● RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ
● PMOS
● VDS
● ID (at VGS = -10V)
● RDS(ON) (at VGS = -4.5V)
● RDS(ON) (at VGS = -2.5V)
● RDS(ON) (at VGS = -1.8V)
● 100% Avalanche Tested
● RoHS Compliant
● ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment Application
● Power switch
● DC/DC converters SOT-23-6L Device G1NP02ELL Package SOT-23-6 Marking G1NP02
ABSOLUTE MAXIMUM RATINGS
TC = 25ºC, unless otherwise noted Parameter Symbol Packaging 3000pcs/Reel NMOS PMOS Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance (note1) VDS ID IDM VGS PD TJ, Tstg Parameter Symbol Thermal Resistance, Junction-to-Ambient RthJA TEL：0755-29961262 20 -20 V 1.36 -1.15 A 5.4 -3.4 A ±10 ±10 V 1.12 1.12...
