Datasheet4U Logo Datasheet4U.com

G1NP02 - N and P Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G1NP02, a member of the G1NP02ELL N and P Channel Enhancement Mode Power MOSFET family.

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • RDS(ON) (at VGS = -2.5V).
  • RDS(ON) (at VGS = -1.8V).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

📥 Download Datasheet

Datasheet preview – G1NP02

Datasheet Details

Part number G1NP02
Manufacturer GOFORD
File Size 554.33 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G1NP02 Datasheet
Additional preview pages of the G1NP02 datasheet.

📁 Similar Datasheet

Other Datasheets by GOFORD
  • G1NP02ELL - N and P Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
GOFORD N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. G1NP02ELL General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ RDS(ON) (at VGS = 2.5V) ⚫ RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ ⚫ PMOS ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.5V) ⚫ RDS(ON) (at VGS = -2.5V) ⚫ RDS(ON) (at VGS = -1.8V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant ⚫ ESD (HBM)>2.0KV -20V -1.
Published: |