G1NP02ELL - N and P Channel Enhancement Mode Power MOSFET

Product Overview

Part number	G1NP02ELL
Manufacturer	GOFORD
File Size	554.33 KB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G1NP02ELL Datasheet
Additional preview pages of the G1NP02ELL datasheet.

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
RDS(ON) (at VGS = 2.5V).
RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RDS(ON) (at VGS = -2.5V).
RDS(ON) (at VGS = -1.8V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

📁 Similar Datasheet

Other Datasheets by GOFORD

Published: Nov 3, 2024 |