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G1NP02ELL Datasheet

Manufacturer: GOFORD
G1NP02ELL datasheet preview

G1NP02ELL Details

Part number G1NP02ELL
Datasheet G1NP02ELL Datasheet PDF (Download)
File Size 554.33 KB
Manufacturer GOFORD
Description N and P Channel Enhancement Mode Power MOSFET
G1NP02ELL page 2 G1NP02ELL page 3

G1NP02ELL Overview

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

G1NP02ELL Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • RDS(ON) (at VGS = 2.5V)
  • RDS(ON) (at VGS = 1.8V)
  • ID (at VGS = -10V)
  • RDS(ON) (at VGS = -4.5V)
  • RDS(ON) (at VGS = -2.5V)
  • RDS(ON) (at VGS = -1.8V)
  • 100% Avalanche Tested
  • RoHS pliant

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