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G1NP02ELL - N and P Channel Enhancement Mode Power MOSFET

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • RDS(ON) (at VGS = -2.5V).
  • RDS(ON) (at VGS = -1.8V).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number G1NP02ELL
Manufacturer GOFORD
File Size 554.33 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G1NP02ELL Datasheet

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Full PDF Text Transcription (Reference)

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GOFORD N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. G1NP02ELL General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ RDS(ON) (at VGS = 2.5V) ⚫ RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ ⚫ PMOS ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.5V) ⚫ RDS(ON) (at VGS = -2.5V) ⚫ RDS(ON) (at VGS = -1.8V) ⚫ 100% Avalanche Tested ⚫ RoHS Compliant ⚫ ESD (HBM)>2.0KV -20V -1.