• Part: G1NP02ELL
  • Description: N and P Channel Enhancement Mode Power MOSFET
  • Manufacturer: GOFORD
  • Size: 554.33 KB
Download G1NP02ELL Datasheet PDF
G1NP02ELL page 2
Page 2
G1NP02ELL page 3
Page 3

G1NP02ELL Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • RDS(ON) (at VGS = 2.5V)
  • RDS(ON) (at VGS = 1.8V)
  • ID (at VGS = -10V)
  • RDS(ON) (at VGS = -4.5V)
  • RDS(ON) (at VGS = -2.5V)
  • RDS(ON) (at VGS = -1.8V)
  • 100% Avalanche Tested
  • RoHS pliant