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G35N02 - N-Channel Enhancement Mode Power MOSFET

Download the G35N02 datasheet PDF. This datasheet also covers the G35N02K variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (G35N02K-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G35N02
Manufacturer GOFORD
File Size 646.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G35N02 Datasheet

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Overview

G35N02K N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 20V 35A < 13mΩ < 18mΩ.

More Datasheets from GOFORD

Part Number Description
G35N02K N-Channel Enhancement Mode Power MOSFET
G35P04 P-Channel Enhancement Mode Power MOSFET
G35P04D5 P-Channel Enhancement Mode Power MOSFET