G35N02K
Description
The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge.
Key Features
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- RDS(ON) (at VGS = 2.5V)
- 100% Avalanche Tested
- Part: G35N02K
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: GOFORD
- Size: 646.04 KB