Datasheet4U Logo Datasheet4U.com

G35N02K - N-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 20V 35A < 13mΩ < 18mΩ.

📥 Download Datasheet

Datasheet preview – G35N02K

Datasheet Details

Part number G35N02K
Manufacturer GOFORD
File Size 646.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G35N02K Datasheet
Additional preview pages of the G35N02K datasheet.

📁 Similar Datasheet

  • G35160 - 35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE (Won-Top Electronics)
Other Datasheets by GOFORD
  • G35N02 - N-Channel Enhancement Mode Power MOSFET
  • G35P04 - P-Channel Enhancement Mode Power MOSFET
  • G35P04D5 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
G35N02K N-Channel Enhancement Mode Power MOSFET Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) ⚫ RDS(ON) (at VGS = 2.
Published: |