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G35P04 - P-Channel Enhancement Mode Power MOSFET

Download the G35P04 datasheet PDF. This datasheet also covers the G35P04D5 variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (G35P04D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G35P04
Manufacturer GOFORD
File Size 847.15 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G35P04 Datasheet

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Overview

G35P04D5 P-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -35A < 14mΩ < 20mΩ Schematic diagram.

More Datasheets from GOFORD

Part Number Description
G35P04D5 P-Channel Enhancement Mode Power MOSFET
G35N02 N-Channel Enhancement Mode Power MOSFET
G35N02K N-Channel Enhancement Mode Power MOSFET