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G35P04 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G35P04, a member of the G35P04D5 P-Channel Enhancement Mode Power MOSFET family.

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -35A < 14mΩ < 20mΩ Schematic diagram.

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Datasheet preview – G35P04

Datasheet Details

Part number G35P04
Manufacturer GOFORD
File Size 847.15 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G35P04 Datasheet
Additional preview pages of the G35P04 datasheet.

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Other Datasheets by GOFORD
  • G35P04D5 - P-Channel Enhancement Mode Power MOSFET
  • G35N02 - N-Channel Enhancement Mode Power MOSFET
  • G35N02K - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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G35P04D5 P-Channel Enhancement Mode Power MOSFET Description The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.
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