G35P04D5 Description
The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G35P04D5 Key Features
- 40V -35A < 14mΩ < 20mΩ
G35P04D5 is P-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Part Number | Description |
|---|---|
| G35P04 | P-Channel Enhancement Mode Power MOSFET |
| G35N02 | N-Channel Enhancement Mode Power MOSFET |
| G35N02K | N-Channel Enhancement Mode Power MOSFET |
The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.