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G66 - N-channel MOSFET

Description

The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -16V 33 mΩ 45mΩ -5.8A.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – G66

Datasheet Details

Part number G66
Manufacturer GOFORD
File Size 1.36 MB
Description N-channel MOSFET
Datasheet download datasheet G66 Datasheet
Additional preview pages of the G66 datasheet.

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    GOFORD Description The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ) -16V 33 mΩ 45mΩ -5.
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