Part G66
Description N-channel MOSFET
Category MOSFET
Manufacturer GOFORD
Size 1.36 MB
GOFORD

G66 Overview

Description

The G66 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @-4.5V(Typ) @-2.5V(Typ)
  • 16V 33 mΩ 45mΩ -5.8A
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package