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G6N02 - N-Channel Power MOSFET

Download the G6N02 datasheet PDF. This datasheet also covers the G6N02L variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l RDS(ON) (at VGS = 2.5V) l 100% Avalanche Tested l RoHS Compliant 20V 6A < 11.3mΩ < 14.1mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G6N02L-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G6N02
Manufacturer GOFORD
File Size 617.11 KB
Description N-Channel Power MOSFET
Datasheet download datasheet G6N02 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G6N02L N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G6N02L N-Channel Enhancement Mode Power MOSFET Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l RDS(ON) (at VGS = 2.5V) l 100% Avalanche Tested l RoHS Compliant 20V 6A < 11.3mΩ < 14.