G6N02 Overview
The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
N-channel Power MOSFET
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | G6N02 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 617.11 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | G6N02 G6N02L Datasheet (PDF) |
|
|
|
The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| G6N02L | N-Channel Power MOSFET |