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G6N02L - N-Channel Power MOSFET

Datasheet Summary

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l RDS(ON) (at VGS = 2.5V) l 100% Avalanche Tested l RoHS Compliant 20V 6A < 11.3mΩ < 14.1mΩ.

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Datasheet preview – G6N02L

Datasheet Details

Part number G6N02L
Manufacturer GOFORD
File Size 617.11 KB
Description N-Channel Power MOSFET
Datasheet download datasheet G6N02L Datasheet
Additional preview pages of the G6N02L datasheet.

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Full PDF Text Transcription

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G6N02L N-Channel Enhancement Mode Power MOSFET Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l RDS(ON) (at VGS = 2.5V) l 100% Avalanche Tested l RoHS Compliant 20V 6A < 11.3mΩ < 14.
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