G6N02L Overview
The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G6N02L Datasheet Details
| Part number | G6N02L |
|---|---|
| Datasheet | G6N02L-GOFORD.pdf |
| File Size | 617.11 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Power MOSFET |
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