G6N02L
G6N02L is N-Channel Power MOSFET manufactured by GOFORD.
Description
The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l RDS(ON) (at VGS = 2.5V) l 100% Avalanche Tested l Ro HS pliant
20V 6A < 11.3mΩ < 14.1mΩ
Application l Power switch l DC/DC converters
Schematic diagram pin assignment
Ordering Information
Device G6N02L
Package SOT-23-3
Marking G6N02
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range
(note1)
VDS ID IDM VGS PD TJ, Tstg
Thermal Resistance
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient
Rth JA
.gofordsemi.
TEL：0755-29961263
SOT-23-3
Packaging 3000pcs/Reel
Value
Unit
±12
-55 To 150
ºC
Value 120
Unit ºC/W
FAX:0755-29961466(A1506)
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Static Parameters Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Threshold...
