G6N02L Description
The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
- Part: G6N02L
- Manufacturer: GOFORD
- Size: 617.11 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G6N02 | N-Channel Power MOSFET |