G70N04 - N-Channel Enhancement Mode Power MOSFET

Download the G70N04 datasheet PDF. This datasheet also covers the G70N04T variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 70A < 7mΩ < 9mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

G70N04 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G70N04T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G70N04
Manufacturer	GOFORD
File Size	0.97 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G70N04 Datasheet

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Other Datasheets by GOFORD

Part Number	Description
G70N04T	N-Channel Enhancement Mode Power MOSFET
G700P06	P-Channel Enhancement Mode Power MOSFET
G700P06J	P-Channel Enhancement Mode Power MOSFET
G700P06LL	P-Channel Enhancement Mode Power MOSFET
G700P06T	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G70N04T N-Channel Enhancement Mode Power MOSFET Description The G70N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.