G70N04T - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 70A < 7mΩ < 9mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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G70N04T n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G70N04T
Manufacturer	GOFORD
File Size	0.97 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G70N04T Datasheet

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Full PDF Text Transcription (Reference)

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G70N04T N-Channel Enhancement Mode Power MOSFET Description The G70N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.