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G75P04FI - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -54A < 7mΩ < 9.5mΩ Schematic diagram.

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Datasheet Details

Part number G75P04FI
Manufacturer GOFORD
File Size 663.12 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G75P04FI Datasheet

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Other Datasheets by GOFORD

Part Number Description
G75P04I P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G75P04FI P-Channel Enhancement Mode Power MOSFET Description The G75P04FI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -54A < 7mΩ < 9.