G7K2N20 Overview
The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G7K2N20 datasheet by GOFORD.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | G7K2N20 |
|---|---|
| Datasheet | G7K2N20 G7K2N20HE Datasheet (PDF) |
| File Size | 900.04 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| G7K2N20HE | N-Channel Enhancement Mode Power MOSFET |