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G7K2N20 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G7K2N20, a member of the G7K2N20HE N-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 200V 2A < 0.70Ω < 0.72Ω l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>4KV Schematic diagram.

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Datasheet preview – G7K2N20

Datasheet Details

Part number G7K2N20
Manufacturer GOFORD
File Size 900.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G7K2N20 Datasheet
Additional preview pages of the G7K2N20 datasheet.

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  • G7K2N20HE - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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G7K2N20HE N-Channel Enhancement Mode Power MOSFET Description The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 200V 2A < 0.70Ω < 0.
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