G7K2N20HE Overview
The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G7K2N20HE Datasheet Details
| Part number | G7K2N20HE |
|---|---|
| Datasheet | G7K2N20HE-GOFORD.pdf |
| File Size | 900.04 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
|
|