G7K2N20HE Description
The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
- Part: G7K2N20HE
- Manufacturer: GOFORD
- Size: 900.04 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G7K2N20 | N-Channel Enhancement Mode Power MOSFET |