Datasheet4U Logo Datasheet4U.com

G800N06 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G800N06, a member of the G800N06H N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 3A < 80mΩ < 85mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Datasheet preview – G800N06

Datasheet Details

Part number G800N06
Manufacturer GOFORD
File Size 869.92 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G800N06 Datasheet
Additional preview pages of the G800N06 datasheet.

📁 Similar Datasheet

  • G80 - Detach Connectors (Mitsumi Electronics)
  • G8050 - NPN EPITAXIAL TRANSISTOR (GTM)
  • G8050S - NPN EPITAXIAL TRANSISTOR (GTM)
  • G8051 - NPN EPITAXIAL TRANSISTOR (GTM)
  • G8051S - NPN EPITAXIAL TRANSISTOR (GTM)
  • G80F903 - 8051 Microcontroller (dycmcu)
  • G80F910 - 8051 microcontroller ADC (dycmcu)
  • G80F910C - 8051 microcontroller ADC (dycmcu)
  • G80F918 - 10 ADC 8051 microcontroller (dycmcu)
  • G80F921 - Integrated LCD driver enhanced 8051 microcontroller single-phase energy measurement IC (dycmcu)
Other Datasheets by GOFORD
  • G800N06H - N-Channel Enhancement Mode Power MOSFET
  • G80N04 - N-Channel Enhancement Mode Power MOSFET
  • G80N06 - MOSFET

Full PDF Text Transcription

Click to expand full text
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
Published: |