G800N06 - N-Channel Enhancement Mode Power MOSFET

Download the G800N06 datasheet PDF. This datasheet also covers the G800N06H variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 3A < 80mΩ < 85mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

G800N06 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G800N06H-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G800N06
Manufacturer	GOFORD
File Size	869.92 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G800N06 Datasheet

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Other Datasheets by GOFORD

Part Number	Description
G800N06H	N-Channel Enhancement Mode Power MOSFET
G80N04	N-Channel Enhancement Mode Power MOSFET
G80N06	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.