G800N06 Overview
The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G800N06 Details
| Part number | G800N06 |
|---|---|
| Datasheet | G800N06 G800N06H Datasheet (PDF) |
| File Size | 869.92 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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