G800N06H Overview
The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Datasheet Details
| Part number | G800N06H |
|---|---|
| Manufacturer | GOFORD |
| File Size | 869.92 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | G800N06H-GOFORD.pdf |
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