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G80N04 - N-Channel Enhancement Mode Power MOSFET

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G80N04 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G80N04

Datasheet Details

Part number	G80N04
Manufacturer	GOFORD
File Size	1.78 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G80N04 Datasheet
Additional preview pages of the G80N04 datasheet.

Product details

Description

The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.
RoHS Compliant.

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Published: Nov 6, 2024 |