• Part: G80N04
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: GOFORD
  • Size: 1.78 MB
Download G80N04 Datasheet PDF
G80N04 page 2
Page 2
G80N04 page 3
Page 3

G80N04 Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • RoHS pliant
  • Load switching
  • Hard switched and high frequency circuits
  • Uninterruptible power supply