G80N04 Overview
The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
G80N04 Key Features
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- RoHS pliant
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
G80N04 Applications
- High density cell design for ultra low Rdson