G80N06
Description
The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
