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G80N06 - MOSFET

Datasheet Summary

Description

The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – G80N06

Datasheet Details

Part number G80N06
Manufacturer GOFORD
File Size 1.46 MB
Description MOSFET
Datasheet download datasheet G80N06 Datasheet
Additional preview pages of the G80N06 datasheet.

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Full PDF Text Transcription

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GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.
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