G80N06 - MOSFET

General Description

The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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G80N06 mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G80N06
Manufacturer	GOFORD
File Size	1.46 MB
Description	MOSFET
Datasheet	G80N06 Datasheet

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Full PDF Text Transcription (Reference)

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GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.