GC11N70 Overview
The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GC11N70 |
|---|---|
| Datasheet | GC11N70 GC11N70F Datasheet (PDF) |
| File Size | 760.47 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| GC11N70F | N-Channel Enhancement Mode Power MOSFET |