• Part: GC11N70F
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: GOFORD
  • Size: 760.47 KB
GC11N70F Datasheet (PDF) Download
GOFORD
GC11N70F

Description

The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 700V 11A < 360mΩ l 100% Avalanche Tested l RoHS compliant