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GC11N70F - N-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 700V 11A < 360mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet Details

Part number GC11N70F
Manufacturer GOFORD
File Size 760.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GC11N70F Datasheet

Full PDF Text Transcription (Reference)

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GC11N70F N-Channel Enhancement Mode Power MOSFET Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.