GC20N65 - N-Channel MOSFET

General Description

The GC20N65 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge.

This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power applications.

Key Features

Optimized body diode reverse recovery performance.
Low on-resistance and low conduction losses.
Small Package.
Ultra Low Gate Charge cause lower driving requirement.
100% Avalanche Tested.
RoHS Compliant.

📥 Download Datasheet

GC20N65 n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	GC20N65
Manufacturer	GOFORD
File Size	1.69 MB
Description	N-Channel MOSFET
Datasheet	GC20N65 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
GC2002N5SBY1B	LCD	Solomon
GC2004C-01XA0	LCD	GEMINI
GC2004N4SKY1B	LCD	Solomon
GC2011A	3.3V DIGITAL FILTER CHIP	Texas Instruments
GC201607-ATC4	SMD Type Green Emitter	CT Micro

Other Datasheets by GOFORD

Part Number	Description
GC20N65T	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GOFORD GC20N65 Description The GC20N65 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power applications.